以下为句子列表：
英文: Developing the lithography process models to properly characterize critical dimension (CD) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to dev
中文: 建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型，有助于开发由成品率驱动的版图设计工具，自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务。
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