以下为句子列表：
英文: Advanced peak detector automatic cutoff with MOSFET and linear current charges battery to 100% without overcharging.
中文: 高级峰值检测器自动以切断功率管输出和线性电流保证电池能被100%充满而不会导致过冲。
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英文: Based on the hydrodynamic energy transport model,the influence of variation of negative junction depth caused by concave depth on the characteristics of deep-sub-micron PMOSFET has been studied.The results are explained by the interior physical mechanism
中文: 基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅PMOSFET性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高.
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英文: C. U. Yaisom, K. N. Werachet and S. Nitta, “The Self-Resonant Frequency Effect of the Conducted EMI Suppression on Power MOSFET Using RCD Snubber Circuit,” Proc. ICEMC, Bangkok, pp. 261-266, (2002).
中文: 郑培璿，电力电子分析与模拟，第3-9?3-27页，台北，全华科技图书股份有限公司，民国九十一年。
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英文: In this paper, the factors which affect the channel length and the length of the pinch-off region of the channel are discussed, and the function of the VDMOSFET is improved by optimizing the channel section.
中文: 摘要讨论了影响沟道长度及沟道的夹断区长度的因素，通过沟道区的优化促进了VDMOSFET性能的提高。
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英文: Basing on Bardeen's transfer Hamiltonian formalism,the charge storage characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory is simulated.
中文: 采用巴丁 (Bardeen)传输哈密顿方法 ,数值计算了 p沟道锗 /硅异质纳米结构存储器的时间特性 .
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